利用硅纳米孔柱阵列(Si-NPA)表面规则的图案化形貌和还原性,采用浸渍沉积技术制备了具有三种不同表面结构特征的Ag/Si-NPA复合纳米体系.在未经清洗的Si-NPA衬底,沉积银的形貌为树枝状;在新鲜衬底和自然老化衬底上,银的沉积都会形成规则的手链网络;而经过强氧化处理的衬底上则不能实现银的浸渍沉积.分析表明,Si-NPA表面的规则阵列和多孔结构等几何构型,在样品的后处理过程中将导致样品表面氧化程度随空间几何位置出现周期性梯度分布,从而对浸渍溶液中银离子在不同几何特征区域的还原、成核及生长模式产生控制作用,最终导致了银在Si-NPA表面浸渍沉积的位置选择性.本研究为采用浸渍沉积技术制备周期性、图案化的金属/硅复合纳米体系,研究其物理性能并探索其可能的器件应用奠定了基础.
参考文献
[1] | Rizzo A;Tngliente M A;Alvisi M;Scaglione S .Structure and Optical Properties d Silver Thin Films Deposited by RF Masnetron Sputtering[J].Thin Solid Films,2001,396:29-35. |
[2] | Dzhafarov T D;Can Omur B;Allahverdiev Z A .Hydrngen-stimulated Changes of Properties of Silver-porons Silicon Interfaces[J].Surface Science,2001,482-485:1141-1144. |
[3] | Ghosh S.;Hong K.;Lee C. .Structural and physical properties of thin copper films deposited on porous silicon[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2002(1):53-59. |
[4] | Nishiyama A.;Zagwijn PM.;Vandenhoven GN.;Frenken JWM. Garten F.;Schlatmann AR.;Vrijmoeth J.;Terhorst G. .GROWTH MODE AND INTERFACE STRUCTURE OF AG ON THE HF-TREATED SI(111)H SURFACE[J].Surface Science: A Journal Devoted to the Physics and Chemistry of Interfaces,1996(1/3):229-238. |
[5] | Aburano R D;Hong H;Roesler J M et al.X-ray Study of the Ag,/Si(111) Interface[J].Surface Science,1995,339:L891-L896. |
[6] | Adams D.;Julies BA.;Mayer JW.;Alford TL. .The effect of metals (Au, Ag) and oxidizing ambient on interfacial reactions in Au/Si and Ag/Si systems[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2003(1/4):163-168. |
[7] | Young T F;Kuo W C;Jiang I M;Chang T C Chang C Y .The Novel Non-linear DC Response of Ag Thin Films Deposited on Porous Silicon:a Fractal Model Explanation[J].Physica A,1995,221:380-387. |
[8] | Coulthard I.;Sham TK. .Novel preparation of noble metal nanostructures utilizing porous silicon[J].Solid State Communications,1998(12):751-754. |
[9] | Pap AE.;Kordas K.;Peura R.;Leppavuori S. .Simultaneous chemical silver and palladium deposition on porous silicon; FESEM, TEM, EDX and XRD investigation[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2002(1/4):56-60. |
[10] | Tsuboi T.;Ogata YH.;Sakka T. .Metal deposition into a porous silicon layer by immersion plating: Influence of halogen ions[J].Journal of Applied Physics,1998(8):4501-4506. |
[11] | Baratto C.;Comini E.;Faglia G.;Benussi G.;La Ferrara V.;Quercia L.;Di Francia G.;Guidi V.;Vincenzi D.;Boscarino D.;Rigato V.;Sberveglieri G. .Gold-catalysed porous silicon for NOx sensing[J].Sensors and Actuators, B. Chemical,2000(1/3):74-80. |
[12] | Fan S;Chapline M G;Franklin N R et al.Self-oriented Regular Arrays of Carbon Nanotubos and Their Field Emission Properties[J].Science,1999,283:512-514. |
[13] | Ansari ZA.;Hong K.;Lee C. .Structural and electrical properties of porous silicon with rf-sputtered Cu films[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2002(1/2):103-109. |
[14] | Read D T;Cheng Y W;Ceiss R .Morphology,Miercotructure,and Mechanical Properties of a Copper Electrodepesite[J].Microelectronic Engineering,2004,75:63-70. |
[15] | Cho NI.;Park DI. .MICROSTRUCTURES OF COPPER THIN FILMS PREPARED BY CHEMICAL VAPOR DEPOSITION[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1997(0):465-469. |
[16] | 许海军,富笑男,孙新瑞,李新建.硅纳米孔柱阵列的结构和光学特性研究[J].物理学报,2005(05):2352-2357. |
[17] | 富笑男,柴花斗,李新建.硅纳米孔柱阵列及其表面铜沉积[J].科学通报,2005(16):1684-1688. |
[18] | Xin Jian Lia;Xing Hu;Yu Jia;Yu Heng Zhang .Tunable superstructures in hydrothermally etched iron-passivated porous silicon[J].Applied physics letters,1999(19):2906-2908. |
[19] | Bisi O;Ossicini S;Pavesi L .Porous Silicon:Quantum Sponge Structure for Silicon Based Optoelectronics[J].Surface Science Reports,2000,38:1-126. |
[20] | Coulthard I;Jiang D T;Lorimer J W;Sham T K .Reductive Deposition of Pd on Porous Silicon from Aqueous Solutions of PdCl2:an X-ray Absorption Fine Strocture Study[J].Langmir,1993,9:3441-3445. |
[21] | Sham T K;Conlthard I;Lorimer J W;Hiraya A,Watanabe M .Reductive Deposition of Cu on Porous Silicon from Aqueous Solutions:An X-ray Absorption Study st the Cu 1.3,2 Edge[J].Chemistry of Materials,1994,6(11):2085-2091. |
[22] | Dhar S;Charkrabarti S .Electroless Nickel Plated Contacts on Porous Silicon[J].Applied Physics Letters,1996,68(10):1392-1393. |
[23] | Tong H;Zhu L;Li M;Wang C .Electroless Silver Deposition on Si (100) Substrste Based on the Seed layer of Silver Itself[J].Electrochimica Acta,2003,48:2473-2477. |
[24] | Dos Santos Filho S G;Pasa A A;Hasensek C M .A Mechanism for Eleotroless Cu Plating onto Si[J].Microelectronic Engineering,1997,33:149-155. |
[25] | Jeske M.;Thonissen M.;Munder H.;Schultze JW. .ELECTRODEPOSITION OF METALS INTO POROUS SILICON[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1995(1/2):63-66. |
[26] | Coulthard I.;Sham TK. .Morphology of porous silicon layers: image of active sites from reductive deposition of copper onto the surface[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,1998(3/4):287-291. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%