采用磁控溅射的方法制备了CoFe/CrPt钉扎的交换偏置体系,用外加磁场真空退火以获得钉扎场.通过把反铁磁的FeMn掺入到该钉扎体系中发现,约0.7nm厚度的FeMn掺入在CoFe/CrPt的界面时,可以使体系的钉扎场从原来的5.6×103A/m增加到1.55×104A/m,而体系的Blocking温度仍然可以达到600℃.
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