退火对电子辐照氮化镓光电性能的影响

人工晶体学报, 2012, 41(6): 1524-1527.

退火对电子辐照氮化镓光电性能的影响

梁李敏 ^1, , 解新建 ^2, , 郝秋艳 ^3, , 田园 ^4, , 刘彩池 ^5,

1.河北工业大学材料科学与工程学院,天津,300130

2.河北工业大学材料科学与工程学院,天津,300130

3.河北工业大学材料科学与工程学院,天津,300130

4.河北工业大学材料科学与工程学院,天津,300130

5.河北工业大学材料科学与工程学院,天津,300130

基金项目: 河北省自然科学基金(F2012202083) 河北省青年科学基金(F2009000124)

关键词： GaN , 辐照缺陷 , 黄光带 , 电子浓度

Effect of Annealing on Optical and Electrical Properties of GaN Irradiated by Electrons

本文对10 MeV电子辐照的GaN进行了不同温度的热退火处理.用光致发光谱和霍尔测量了样品的光电性能随退火温度的变化.实验结果表明:黄光带强度、电子浓度和电子迁移率随退火温度呈非线性变化.在200～600℃退火范围内,黄光带、电子浓度和电子迁移率的变化是由于辐照Ga空位与O施主杂质的结合和断裂引起的.800℃退火后黄光带、电子浓度和电子迁移率的变化与电子辐照引入的N空位有关.

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退火对电子辐照氮化镓光电性能的影响

Effect of Annealing on Optical and Electrical Properties of GaN Irradiated by Electrons

参考文献