利用磁控溅射法制备Substrate/Seed Ta(5 nm),Co75Fe25(5 nm)/Cap Ta(8 nm)铁磁膜,通过透射电镜(TEM)、选区电子衍射(SAED)和X射线衍射(XRD)等分析测试手段,研究Ga+离子辐照对CoFe磁性薄膜的矫顽力及薄膜的组织、结构的影响,利用SRIM2003软件模拟分析离子辐照后Ga、Ta等元素在CoFe薄膜中的深度分布情况.研究结果表明:采用低剂量(＜1×1013ion·cm-2)的Ga+离子辐照对薄膜的矫顽力和磁性薄膜的组织,结构影响不大;随着辐照剂量的逐渐增大,磁性薄膜的矫顽力减小,晶粒变大,<111>方向的织构明显减弱;当辐照剂量＞1×1015ion·cm-2时,注入到CoFe薄膜中的Ta、Ga原子及Ga+离子在与原子碰撞过程中形成空位、间隙原子等多种晶体缺陷,促进晶体向非晶体的转变.
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