以双靶射频溅射和交替沉积的方法制备了不同化学组成的BaM铁氧体薄膜.对所沉积的薄膜进行了两种不同方式的热处理.通过热处理后铁氧体薄膜的X射线衍射(XRD), 逆转换电子穆斯堡尔谱(CEMS)及原子力显微镜(AFM)等微观结构的分析和宏观磁性的测试,结果表明两步骤退火过程对于垂直取向结构的形成是有利的.
The BaM ferrite films with fine grain size as small as 30 nm were prepared by reactive RF diode sputtering method, using alternate depositing process. It is found that two step annealing process is beneficial for films to form perpendicular orientation structures, which were identified by microstructure measurement such as X-ray diffraction pattern (XRD), conversion electron Mssbauer spectra (CEMS) and atomic force microscope(AFM).
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