An in situ X-ray diffraction technique was developed to investigate the interdiffusion phenomena in compositionally modulated amorphous Ni/Si multilayers with nanometer scale modulation period. The interdiffusivities and interdiffusion lengths on the order of an interatomic distance were obtained by monitoring the decay of the first-order modulation peak as a function of annealing time. The temperature dependent interdiffusivity can be described using an Arrhenius relationship. The relation between the interdiffusivity and modulation period of the amorphous Ni/Si multilayers was also obtained. The interdiffusion phenomenon in amorphous Ni/Si multilayers is discussed.
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