1.55微米波段GaAs基近红外长波长材料在光纤通讯,高频电路和光电集成等领域有潜在的应用价值.本文用分子束外延方法研究了GaAs基异变InAs量子点材料的生长,力图实现在拓展量子点发光波长的同时保持或增加InAs量子点的密度.在实验中,首先优化了In0.15GaAs异变缓冲层的生长,研究了生长温度和退火对减少穿通位错的作用.在此基础上,优化了长波长InAs量子点的生长.最终在GaAs基上获得了温室发光波长在1491rim,半高宽为27.73meV,密度达到4×1010cm-2的InAs量子点.
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