通过研究GPS烧结氮化硅陶瓷的室温和高温抗弯强度、晶界相含量和成分以及晶界析晶相随氮化硅粉料表面氧含量的变化规律,发现当粉料表面氧含量低于1.35 mg/m2时,氮化硅陶瓷在室温下的抗弯强度基本保持不变.试样在1200℃时的抗弯强度明显低于室温强度,且随着粉料表面氧含量的增加有一最高值.由于烧结助剂引入的O和Si在烧结过程中的还原气氛下发生反应而损失,烧结体中晶界相的实际含量显著低于粉料中烧结助剂的加入量.随粉料表面氧含量的增加,氮化硅陶瓷烧结体中的二次析晶相α-Y2Si2O7和β-Y2Si2O7消失,只有β-Si3N4晶相和晶界玻璃相存在.
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