材料期刊网

We report on the infrared laser-induced photovoltaic effect of a heterostructure comprising a n-ZnO film with an electron concentration of 1.6 x 10(21) cm(-3) and a MgB2 film with a high carrier concentration of 1.8 x 10(23) cm(-3) at room temperature. Current-voltage characteristics of the structures have good rectifying diode-like behaviour. An open-circuit photovoltage of 10 ns rise time and 20 ns full width at half-maximum was observed under the illumination of a 1.064 mu m pulsed laser for a duration of 25 ps. When the junction was irradiated by a 10.6 mu m CO2 laser pulse for 60 ns, a transient photovoltaic signal of similar to 27 mV occurred with a rise time of similar to 60 ns. A possible mechanism of the observed phenomena is discussed based on the laser-induced hot carrier photovoltaic effect.