金属电沉积的循环伏安(CV)曲线上的成核环可以用于分析添加剂对电沉积的影响及其作用机理.以常用的3种酸性镀铜添加剂为例,探讨了不同添加剂下成核环的形成特点,并从其成核环的位置以及构成成核环的电流曲线来探讨添加剂对铜沉积的影响及其机理.结果表明:当成核环分别位于不加添加剂的阴极电位和阳极电位方向时,添加剂对金属电沉积分别具有阻化和促进作用;阴极扫描方向电流密度Jb和回扫的阳极电流密度Ja是CV曲线成核环的两个特征参数,添加剂作用下的Ja和Jb与不加添加剂的接近,表明添加剂通过吸附-脱附机理影响金属的沉积,反之表明添加剂在电极表面参与化学反应.
参考文献
[1] | Garrido, MEH;Pritzker, MD.Voltammetric study of the inhibition effect of polyethylene glycol and chloride ions on copper deposition[J].Journal of the Electrochemical Society,20084(4):D332-D339. |
[2] | Jae Jeong Kim;Soo-Kil Kim;Yong Shik Kim.Catalytic behavior of 3-mercapto-1-propane sulfonic acid on Cu electrodeposition and its effect on Cu film properties for CMOS device metallization[J].Journal of Electroanalytical Chemistry: An International Journal Devoted to All Aspects of Electrode Kinetics, Interfacial Structure, Properties of Electrolytes, Colloid and Biological Electrochemistry,20030(0):61-66. |
[3] | 钟琴 .添加剂MPS、PEG、Clˉ对铜电沉积的影响研究[D].重庆大学,2010. |
[4] | Darko Grujicic;Batric Pesic.Electrodeposition of copper: the nucleation mechanisms[J].Electrochimica Acta,200218(18):2901-2912. |
[5] | James J. Kelly;Alan C. West.Copper deposition in the presence of polyethylene glycol[J].Journal of the Electrochemical Society,199810(10):3472-3476. |
[6] | Rohan Akolkar;Uziel Landau.A Time-Dependent Transport-Kinetics Model for Additive Interactions in Copper Interconnect Metallization[J].Journal of the Electrochemical Society,200411(11):C702-C711. |
[7] | Wu BH.;Wan CC.;Wang YY..Void-free anisotropic deposition for IC interconnect with polyethylene glycol as the single additive based on uneven adsorption distribution[J].Journal of Applied Electrochemistry,20039(9):823-830. |
[8] | Burke LD;O'Connell AM;Sharna R;Buckley CA.Involvement of a metastable surface state in the electrocatalytic, electrodeposition and bath additive behaviour of copper in acid solution[J].Journal of Applied Electrochemistry,20068(8):919-929. |
[9] | L. Bonou;M. Eyraud;R. Denoyel;Y. Massiani.Influence of additives on Cu electrodeposition mechanisms in acid solution: direct current study supported by non-electrochemical measurements[J].Electrochimica Acta,200226(26):4139-4148. |
[10] | Stoychev D.;Tsvetanov C..BEHAVIOUR OF POLY(ETHYLENE GLYCOL) DURING ELECTRODEPOSITION OF BRIGHT COPPER COATINGS IN SULFURIC ACID ELECTROLYTES[J].Journal of Applied Electrochemistry,19967(7):741-749. |
[11] | Z. Vivian Feng;Xiao Li;Andrew A. Gewirth.Inhibition Due to the Interaction of Polyethylene Glycol, Chloride, and Copper in Plating Baths: A Surface-Enhanced Raman Study[J].The journal of physical chemistry, B. Condensed matter, materials, surfaces, interfaces & biophysical,200335(35):9415-9423. |
[12] | M. Eyraud;S. Kologo;L. Bonou;Y. Massiani.Effect of additives on Cu electrodeposits: electrochemical study coupled with EQCM measurements[J].Journal of electroceramics,20061(1):55-63. |
[13] | Walker ML;Richter LJ;Moffat TP.In situ ellipsometric study of PEG/Cl- coadsorption on Cu, Ag, and Au[J].Journal of the Electrochemical Society,20056(6):C403-C407. |
[14] | M. A. Pasquale;L. M. Gassa;A. J. Arvia.Copper electrodeposition from an acidic plating bath containing accelerating and inhibiting organic additives[J].Electrochimica Acta,200820(20):5891-5904. |
[15] | Hebert KR;Adhikari S;Houser JE.Chemical mechanism of suppression of copper electrodeposition by poly (ethylene glycol)[J].Journal of the Electrochemical Society,20055(5):C324-C329. |
[16] | B. Bozzini;L. D'Urzo;C. Mele;V. Romanello.Electrodeposition of Cu from acidic sulphate solutions in the presence of polyethylene glycol and chloride ions[J].Journal of Materials Science. Materials in Electronics,200611(11):915-923. |
[17] | Wen-Ching Tsai;Chi-Chao Wan;Yung-Yun Wang.Frequency Effect of Pulse Plating on the Uniformity of Copper Deposition in Plated Through Holes[J].Journal of the Electrochemical Society,20035(5):C267-C272. |
[18] | Marc Petri;Dieter M. Kolb;Ulrich Memmert.Adsorption of PEG on Au(111) Single-Crystal Electrodes and Its Influence on Copper Deposition[J].Journal of the Electrochemical Society,200412(12):C793-C797. |
[19] | C. Gabrielli;P. Mocoteguy;H. Perrot;D. Nieto-Sanz;A. Zdunek.A model for copper deposition in the damascene process[J].Electrochimica Acta,20068/9(8/9):1462-1472. |
[20] | P. M. Vereecken;R. A. Binstead;H. Deligianni;P. C. Andricacos.The chemistry of additives in damascene copper plating[J].IBM journal of research and development,20051(1):3-18. |
[21] | Kazuo Kondo;Taichi Nakamura;Naoki Okamoto.Correlation between Cu (I)-complexes and filling of via cross sections by copper electrodeposition[J].Journal of Applied Electrochemistry,200910(10):1789-1795. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%