用热蒸发的方法合成了铟掺杂的ZnGa2O4纳米线.利用透射电镜和X射线能谱对样品的结构和成分进行了研究.在"之"字形和竹节形两种形貌的纳米线中分别发现了孪晶和面位错两种缺陷."之"字形生长的纳米折线是孪晶,沿<111>方向生长,孪晶角为140°.竹节形的纳米线沿<011>方向生长,竹节处存在两种面位错,面位错与生长方向分别成54°和90°角.缺陷的存在对纳米线的性质将产生重要影响.
In-doped ZnGa2O4 nanowires were synthesized by a thermal evaporation method. Transmission electron microscopy and energy-dispersive X-ray spectroscopy were used to study the structures and components of the product. Twinning and planar dislocations were observed in zigzag and bamboo-like nanowires. The zigzag nanowires are [111] twinning. They grow along the < 111 > direction. Thetwinning angle is 140° . Nanowires with bamboo-like joints grow along the < 011 > direction. Two kinds of planar dislocations are observed in them. The dislocations have an angle about 54° and 90° to the growth direction, respectively. The defects should be important to the properties of the nanostructures.
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