氢化非晶硅(a-Si:H)是一种重要的光敏感薄膜材料,其稳定性的好坏是决定能否应用于器件的重要因素之一.介绍了a-Si:H薄膜稳定性的研究进展,论述了a-Si:H薄膜的稳定性与Si-Si弱键的关系,分析了先致衰退效应(S-W效应)产生的几种机理,提出了在薄膜制备和后处理过程中消除或减少Si-Si弱键以提高a-Si:H薄膜稳定性的方法.
参考文献
| [1] | Tissot J L;Rothan F;Vedel C et al.LETI/LIR'S uncooled microbolometer development[J].Proceedings of the SPIE,1988,3379:139. |
| [2] | 清水立生,严辉.非晶半导体的研究与应用[J].功能材料,2001(04):348-352. |
| [3] | Steabler D L;Wronski C R .Reversible conductivity changes in discharge-produced amorphous silicoa[J].Applied Physics Letters,1977,31:292. |
| [4] | Stutzmann M;Jackson W B;Tsai C C .Light-induced metastable defects in hydrogenated amorphous silicon;A systematic study[J].Physical Review B:Condensed Matter,1985,32:23. |
| [5] | Street R A;Winer K .Defect equilibria in undoped a-Si:H[J].Physical Review B:Condensed Matter,1989,40:6236. |
| [6] | Branz H .Hydrogen collision model of light-induced metastability in hydrogenated amorphous silicoa[J].Solite State Comanications,1998,105:387. |
| [7] | Sriraman S;Agarwal S;Aydil E S et al.Mechanism of hydrogen-induced crystallization of amorphous silicoa[J].Nature,2002,418(6893):62. |
| [8] | Powell M J;Dean S C .Improved defect-pool model for charged defects in amorphous silicoa[J].Physical Review B:Condensed Matter,1993,48:10815. |
| [9] | Adler D .Origin of the photo-induced changes in hydrogenated amorphous silicoa[J].Solar Cells,1983,9:133. |
| [10] | Ishii N;Kumeda M;Shimizu T .A model for the StaeblerWronski effect based on charged impurities[J].Japanese Journal of Applied Physics,1985,24:L244. |
| [11] | Redfield D;Bube R H .Identification of defects in amorphous silicoa[J].Physical Review Letters,1990,65:464. |
| [12] | Shimizu S.;Okawa K.;Azuma M.;Kamiya T.;Fortmann CM. Shimizu I.;Komaru T. .Properties of amorphous silicon solar cells fabricated from SiH2Cl2[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2001(1/4):289-295. |
| [13] | Uesugi T;Ihara H;Matsumura H.Steabler-Wronski effect in hydro-fluorinated amorphous silicon prepared using the intermediate species SiFz[J].Japanese Journal of Applied Physics Part l-Regular Papers Short Notes and Review Papers,1985:24-909. |
| [14] | Schmid U;Seidel H .Enhanced stability of Ti/Pt micro-heaters using a-SiC : H passivation layers[J].Sensors and Actuators, A. Physical,2006(0):194-201. |
| [15] | Mokeddem K;Aoucher M;Smail T .Hydrogenated amorphous silicon nitride deposited by DC magnetron sputtering[J].Superlattices and microstructures,2006(4/6):598-602. |
| [16] | 张慧芳,吴召平.a-Si：H薄膜光衰效应的研究[J].山东工业大学学报,2001(05):428-432. |
| [17] | Su T;Taylor P C;Ganguly G et al.Direct role of hydrogen in the staebler-wronski effect in hydrogenated amorphous silicoa[J].Physical Review Letters,2002,89:015502. |
| [18] | Tissot J L et al.320X240 microbolimeter uncooled IRFPA development[J].Proc of SPIE,2000,413:473. |
| [19] | Myong S Y;Kwon S W;Lim K S et al.Inclusion of nanosized silicon grains in hydrogenated protocrystalline silicon multilayers and its relation to stability[J].Applied Physics Letters,2006,88(083118):1. |
| [20] | Ambrosone G;Coscia U;Murri R.Structural,optical and electrical characterizations of fzc-Si:H films deposited by PECVD[J].Solar Energy & Solar Cells,2005:87-375. |
| [21] | Laia M Z et al.Thermal effects on LPCVD amorphous silicoa[J].Thin Solid Films,2006,504:145. |
| [22] | Parka J H;Kima D Y;KyungKoa J et al.High temperature crystallized poly-Si on Mo substrates for TFT application[J].Thin Solid Films,2003,427:303. |
| [23] | Rao R;Sun G C .Microwave annealing enhances Al-induced lateral crystallization of amorphous silicon thin films[J].Journal of Crystal Growth,2004,273:68. |
| [24] | Popova L;Peneva S;Aleksandrova P;Beshkov G .Structural investigations of RTA boron-doped thin a-Si layers[J].Journal of Materials Science. Materials in Electronics,2005(8):489-493. |
| [25] | Saleh R;Nickel NH;Maydell KV .Laser crystallization of compensated hydrogenated amorphous silicon thin films[J].Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites,2006(9/20):1003-1007. |
| [26] | Cosciaa U;Ambrosonea G;Minarinib C et al.Structural modification of laser annealed a-Si1-x-Cx:H films[J].Applied Surface Science,2006,252:4493. |
| [27] | Aoki T;Kanno H;Kenjo A;Sadoh T;Miyao M .Au-induced lateral crystallization of a-Si1-xGex (x : 0-1) at low temperature[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2006(1/2):44-47. |
| [28] | Wang Y.Z.;Awadelkarim O.O. .Metal-induced solid-phase crystallization of hydrogenated amorphous silicon:dependence on metal type and annealing temperature[J].Applied physics, A. Materials science & processing,2000(5):587-590. |
| [29] | Park SJ;Kim KH;Jang J .Control of grain position in Ni-mediated crystallization of amorphous silicon[J].Journal of Crystal Growth,2006(2):382-386. |
| [30] | Rojas-Lopez M;Orduna-Diaz A;Delgado-Macuil R;Gayou VL;Perez-Blanco RE;Torres-Jacome A;Olvera-Hernandez J .Morphological transformation and kinetic analysis in the aluminum-mediated a-Si : H crystallization[J].Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites,2006(3):281-284. |
| [31] | Wang NL;Dalal VL .Improving stability of amorphous silicon using chemical annealing with helium[J].Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites,2006(9/20):1937-1940. |
| [32] | Rui Yunjun;Mei Jiaxin;Xu Jun et al.Structural ordering in amorphous silicon thin film due to post hydrogen plasma annealing[J].Proc of SPIE,2004,5774:279. |
| [33] | Branz H M;Boulder C O .Method for improving the stability of amorphous silicon[P].US 713400B1,2004-03-30. |
| [34] | Branz H M;Xu Y Q;Heck S et al.Improved stability of hydrogenated amorphous silicon photosensitivity by ultraviolet illumination[J].Applied Physics Letters,2002,81:3353. |
| [35] | Zhang M.;Nakayama Y.;Pan L. .Structural modifications of hydrogenated amorphous carbon nitride due to ultraviolet light irradiation and thermal annealing[J].Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites,2000(Pt.B):815-820. |
| [36] | Bronner W.;Mehring M.;Bruggemann R. .Transport and electrically detected electron spin resonance of microcrystalline silicon before and after electron irradiation - art. no. 165212[J].Physical Review.B.Condensed Matter,2002(16):5212-0. |
| [37] | Klaver A;Metselaar J W;Zeman M.Simulations on 1-Mev electron-beam irradiated amorphous silicon solar cells with varying thickness[A].Florida,USA,2005:1440. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%