采用电子束蒸发法,以高纯CdS块料为膜料在玻璃基底上制备了CdS薄膜,设计了L9(34)正交实验,研究了各工艺参数对薄膜光电性能的影响.结果表明,随着基底温度,蒸发速率的提高,薄膜的电阻值呈降低趋势达到最小值后稍有升高;薄膜的阻值随真空度的降低而降低,达到一定程度后阻值基本保持不变.薄膜的暗亮电阻比即光敏性,随基底温度的增大先增大达到最大值后开始减小;而随蒸发速率的提高光敏性先缓后急的增加;真空度对光敏性的影响与蒸发速率对光敏性的影响正好相反,表现为随真空度的增加光敏性先急后缓的降低.正交实验表明:当基底温度为150℃,蒸发速率为1 nm·s-1,真空度为3×10-3 Pa时,薄膜的光电性能最好.CdS薄膜的光敏性达到7.7×102,其中亮电阻的最小值为1350Ω/□.
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