在研究等离子聚合法所合成的聚对二甲苯(ppPX)薄膜的化学结构和性能的基础上, 考察了ppPX作为铜在Si--SiLK基体上阻隔层的应用可能性。在特定辉光射频条件下, ppPX膜表面的苯环能够保留。加热退火后, 铜向裸Si--SiLK和向经ppPX接枝修饰的Si--SiLK基体的扩散程度存在差异。经由Ar和N2载气所承载的对二甲苯单体所聚合得到的ppPX, 具有不同的结构和性能, 后者能改善铜和聚合物膜间的粘附力。因此, 在Si--SiLK基底表面制备ppPX膜, 可提高铜在基体上的粘附强度, 又能阻隔铜向内基体内扩散。
Plasma graft polymerization of para–xylene (ppPX) on argon plasma–pretreated porous SiLK films coated Si(100) wafers (Si–SiLK) and retardation of copper diffusion on ppPX are investigated in the present work. The topography of the ppPX grafted Si–SiLK (Si–SiLK–g–ppPX) surfaces was analyzed by atomic force microscopy. X–ray photoelectron spectroscopy and fourier transform infrared spectroscopy results show that the benzene rings of ppPX can be retained to a large extent under a certain grow discharge conditions. Field emission scanning electron microscopy reveals the extent of copper diffusion into the pristine and graft–modified Si–SiLK substrates after thermal annealing. Since para–xylene monomers were introduced with argon (Ar) and nitrogen (N2), the different chemical structures of two kinds of ppPX are achieved and it is found that nitrogen could improve the adhesion between copper and the polymer film. Therefore, ppPX surface prepared on Si–SiLK wafers surface can serve a promising adhesion promotion layer and a diffusion barrier for copper.
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