采用电化学的方法在半导体Si表面沉积了CuCo颗粒膜.研究了膜层电沉积过程中颗粒膜生长的显微结构及热处理过程颗粒膜元素的分布情况.经过450℃退火处理1h后Cu80Co20薄膜GMR达到最大值,随着温度的升高膜层的电阻率也随之下降.面扫描元素分析和XRD分析表明经过退火处理膜层中出现Co粒子的析出,出现了局部富钴的区域.磁阻测量表明此时有利于提高膜层的GMR值.更高温度的退火处理使GMR值降低.磁性能测量发现随着退火温度的提高膜层的饱和磁化强度Ms、矫顽力Hc和剩余磁化强度Mr也随着变大.
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