Ｓｉ衬底上生长的Ｃｏ薄膜，经２５０，４５０，５００℃退火后．用电子显微镜对Ｃｏ／Ｓｉ界面处ＣｏＳｉ化合物的相转变进行了观察结果发现ＣｏＳｉ为多晶颗粒．ＣｏＳｉ相和基体无取向关系Ｃｏ／Ｓｉ界面在退火温度范围内的相变过程为：２５０─４５０℃４５０─５００℃Ｃｏ２Ｓｉ＋Ｃｏｓｉ─→ＣＯＳｉ─→Ｃｏｓｉ＋ＣｏＳｉ２
TEM observation was carried out on the phase transformation of CoSi along Co/ Si interface of the film grown on the Si substrate annealed at 250, 450 or 500℃respectively. CoSi is found to be the polycrystalline grains and no epitaxial relationship occurred between Si substrate and CoSi. The sequence of phase transformation for Co/Si interface in the annealing temperature range may be：250-450℃ 450-500℃Co2Si+ CoSi─→ CoSi─→CoSi+CoSi2(Correspondent: ZHANG Zaoli, Department of Material Physics, University of Science and TechnologyBeijing Beijing 100083)
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