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  4. ZnO薄膜p型掺杂的研究进展

材料导报, 2007, 21(z1): 297-300.

ZnO薄膜p型掺杂的研究进展

李驰平 1, , 张铭 2, , 宋雪梅 3, , 王波 4, , 李彤 5, , 严辉 6,

1.北京工业大学材料科学与工程学院,北京,100022

2.北京工业大学材料科学与工程学院,北京,100022

3.北京工业大学材料科学与工程学院,北京,100022

4.北京工业大学材料科学与工程学院,北京,100022

5.北京工业大学材料科学与工程学院,北京,100022

6.北京工业大学材料科学与工程学院,北京,100022

基金项目:   国家重点基础研究发展计划(973计划)(2002CCC01300)   北京市优秀人才培养基金(20041D0501513)   国家自然科学基金(20021003)   国家自然科学基金(60576012)  

关键词： ZnO薄膜 , p型掺杂 , 共掺杂方法

Recent Research Progress in p-type Doping of ZnO Thin Film

ZnO薄膜作为一种多功能半导体材料,近年来一直受到广泛关注.然而,如何制备高质量的p型ZnO薄膜是实现其实用化的关键.概括了p型掺杂困难的原因,并指出Ⅲ-Ⅴ族元素共掺杂可能是p型掺杂的最好方法.简单回顾了ZnO薄膜p型掺杂的研究现状,并对今后的发展趋势进行了展望.

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