通过对InP/GaAs异质键合实验方法的研究,提出了包括表面活化处理、真空预键合和退火热处理的三步法,在350℃低温下实现了InP/GaAs异质材料的键合.界面电流-电压(I-V)特性的研究表明,350℃样品的界面过渡层极薄,电子主要以隧穿方式通过界面,而450℃的扩散使得过渡层增厚,界面电流-电压特性可视为双肖特基二极管的反向串联.同时,对键合样品也进行了拉力测试,实验结果表明450℃样品的键合强度优于350℃样品.最后,对InP/GaAs异质材料的键合机理进行了探讨.
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