材料期刊网

以金属Ti为阳极, 不锈钢薄片和镀Mo玻璃为阴极, 采用恒电流电沉积的方法制备了 化学计量比为1∶1、厚度为1 um且致密均匀的Cu-In薄膜. 分析了镀液离子浓 度、电流密度、络合剂含量及添加剂种类对薄膜成分及形貌的影响. 在除电流密度 外其它工艺条件相同的情况下, 采用不同阴极材料为衬底沉积Cu-In薄膜时, 薄膜形 貌、成分无差别, 且电流密度对薄膜的形貌和成分控制起着关键的作用. 此外, 在镀液离子低浓度范围内, 及Cu/In离子浓度比不变的前提下, 镀液中金属离子总浓度的 改变不会影响镀层的成分和形貌; 十二烷基硫酸钠和苯亚磺酸钠可作为理想的辅助 添加剂, 能改善薄膜形貌, 使其表面均匀、规整. 由该方法制备的Cu-In预置膜可以 进一步硒化得到理想的CuInSe 2薄膜.

Cu-In films with chemical composition ratio of 1∶1 are deposited on stainless steel and Mo-coated glass substrate under constant current with Ti worked as anode. The Cu-In precursor film with the thickness of 1 um is uniform and compact. The influences of deposition parameters such as the electrolyte contents, current density, the type and concentration of complexing agent, $etc.$, on films composition and morphology were studied. Those parameters with the exception of current density are allowed to be same when different kinds of substrates are employed. Current plays an important role in affecting the property of precursor films. If the ratio of Cu 2+ to In 3+ is constant, the total concentration of ions showed inappreciable influence on film morphology. The result shows that lauryl sodium sulfate and sodium benzenesulfinate as ideal additives can make the films more flat and smooth. The Cu-In films prepared by such method provide a good foundation for further selenization process obtaining CuInSe 2 film.