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Large area diamond film growths were carried out on Si wafer 40 mm in diameter using multi-filament chemical vapor deposition (CVD). For the purpose of increasing the utilization ratio of reactive gases and gas how velocity a conduit and gas centralizing cavity were used during deposition. Deposited films were characterized by scanning electron microscope (SERI) and Raman spectroscopy. Thickness variations across the substrate were measured. The experimental results show that high quality diamond films were deposited all over the substrate surface. The film quality and growth rate are uniform across the substrate surface. Due to the introduction of conduit and gas-centralizing cavity the growth rate is rather high and is about 2 mu m h(-1). (C) 1999 Elsevier Science S.A. All rights reserved.