用固相反应法制备了二元掺杂系列La2/3(CaxBa1-x)1/3MnO3(x=0,0.40,0.45,0.55,0.60,1.0)多晶材料;在77 K~420 K范围内测量了样品的电阻和磁电阻.结果表明,所制备的系列样品电阻率与温度的关系具有明显的双电阻峰结构;在T=77 K~350 K范围内,样品均有相似的磁电阻行为:在低温区(T<Tc,,Tc为居里温度),磁电阻(MR)随T的下降几乎线性增加,在此区域采用用自旋极化电子隧道效应和局域化模型较好地解释了电阻和磁电阻行为.在较低温度(77 K~100 K)都有较大的MR值,这与单晶材料和薄膜材料的MR行为完全不同,这一差异是由于晶界效应所致;在Tc附近,样品都出现了磁电阻峰.在T>Tc区域,电阻率、磁电阻都随温度的升高而迅速下降,样品在高温(Tc附近及T>Tc区域)的这一行为可用双交换(DE)模型与非磁无序来说明.通过掺杂研究发现,掺杂量x为0.55,0.60的2种样品在室温下具有较大的磁电阻,在B=1.2 T时分别达到14.5%和19.5%.
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