晶体硅纳米线及纳米孔阵列结构不仅有着优异的增吸收特性,而且与传统的硅膜电池相比能大幅降低原料成本,因而在光伏市场中有着巨大发展前景.本文采用严格耦合波分析(RCWA)研究了晶体硅正方形纳米线和纳米孔阵列结构的辐射特性,证明了两种结构的应用潜力.在AM1.5太阳能光谱辐射强度下,纳米线和纳米孔阵列结构最终效率都大于24％,高出同等厚度晶体硅薄膜70％以上.两种纳米结构在周期600 nm附近达到最高,其中纳米线阵列结构有着更低的最优填充率.不同角度混合极化入射下,两种结构的最终效率能够维持在大的角度范围内(0～60°),表现了良好的角度特性.
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