金相、X射线电子能谱和显微硬度等实验表明,Si在Al-0.35wt-％Si合金氧化膜下的过饱和空位造成的空位坑中有Si的偏聚.这种偏聚只能用空位-Si原子复合体扩散导致的非平衡偏聚理论来解释。
Si segregation was observed in the vacancy condensation pits, formed by supersaturated vacancies below the oxidation layer of Al—0.35 wt-%Si alloy, by optical microscopy, X-ray photoeletron spectroscopy and microhardness test. This phenomenon could only be explained by diffusion of vacancy-Si complex inducing non-equilibrium segregation.
参考文献
| [1] | |
| [2] | |
| [3] | |
| [4] | |
| [5] | |
| [6] |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%