在单粒子势模型的框架下,计算了O同位素和F同位素的基态和某些低激发态的能级值、均方根半径值及密度分布.通过在伍兹-萨克逊势中引入同位旋依赖项,研究了同位旋效应对F同位素s-d能级间隙的影响.理论计算得到的均方根半径值和自旋宇称值与实验结果一致.尤其是,理论计算能够实现16F,15F和14F中2s1/2与1d5/2质子能级间的反转,且F同位素中s-d质子能级间隙及其整体变化趋势与已知实验结果符合较好.此外,理论结果表明12F的(1/2)+第一激发态为单质子晕态.
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