欢迎登录材料期刊网

材料期刊网

高级检索

采用磁控溅射方法制备NiFe/FeMn双层膜(分别以Ta、Cu作为缓冲层,Ta作为保护层).实验发现,以Ta为缓冲层的NiFe/FeMn双层膜的交换偏置场比以Cu为缓冲层的NiFe/FeMn双层膜的交换偏置场大,而矫顽力却很小.我们从织构、界面粗糙度两方面对其中的原因进行了分析.以Ta为缓冲层的NiFe/FeMn双层膜有好的织构且NiFe/FeMn界面较平滑,这引起了较强的交换偏置场和较低的矫顽力.

参考文献

[1] MeiklejohnW H;BeanCP .[J].Physical Review,1956,102:1413.
[2] Neel L .[J].Annals of Phys(Paris),1967,2(02):61.
[3] Mauri D;Kay E;Scholl D et al.[J].Journal of Applied Physics,1987,62:3047.
[4] Malozemoff A P .[J].Physical Review,1987,35:3679.
[5] Koon NC .Calculations of exchange bias in thin films with ferromagnetic/antiferromagnetic interfaces[J].Physical review letters,1997(25):4865-4868.
[6] Schulthess T C;W H Butler .[J].Physical Review Letters,1998,81:4561.
[7] Dienh B;Speriosu V S;Parkin S P et al.[J].PHYSICAL REVIEW LETTERS,1991,43:1297.
[8] Hou C H;Hideo F;Robert D M .[J].Journal of Applied Physics,1996,80:4528.
[9] Mao M.;Law B.;Grabner F.;Vaidya S.;Cerjan C. .Influence of base pressure on FeMn exchange biased spin-valve films[J].Journal of Applied Physics,2000(9 Pt.2):4933-4935.
[10] Qian Z H;Sicertsen J M;Judy J H .[J].Journal of Applied Physics,1996,83:6825.
[11] Yu G H;Chai C L;Zhu F W et al.[J].Applied Physics Letters,2001,78:1706.
[12] ChoeG;GuptaS .[J].Applied Physics Letters,1997,70:1766.
[13] Yeh T;Berg L;Falenschek J et al.[J].Materials Research Society Symposium Proceedings,1995,384:233.
[14] Umebayashi H;Ishilawa Y .[J].Journal of The Physical Society of Japan,1966,21:1281.
[15] Jungblut R;Coehoorn R;Johnson M T et al.[J].Journal of Applied Physics,1994,75:6659.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%