材料科学技术（英文）,
2010, 26(4): 371-374.
1,
,
2,
,
3,
,
4,
,
5,
1.Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Kusong-dong, Yusong-gu, Taejon 305-701, Korea
2.Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Kusong-dong, Yusong-gu, Taejon 305-701, Korea
3.Hynix Semiconductor Incorporated, San 136-1, Ami-ri, Bubal-eub, Icheon-si, Kyongki-do, 467-701, Korea
4.Hynix Semiconductor Incorporated, San 136-1, Ami-ri, Bubal-eub, Icheon-si, Kyongki-do, 467-701, Korea
5.Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Kusong-dong, Yusong-gu, Taejon 305-701, Korea
基金项目:
the National Core Research Center Program (NCRC) from KOSEF and MOST(R15-2006-022-02004-0)
Theoretical Simulation of Surface Evolution Using the Random Deposition and Surface Relaxation for Metal Oxide Film in Atomic Layer Deposition
Ji-Hoon Ahn
1,
, Se-Hun Kwon
2,
, Jin-Hyock Kim
3,
, Ja-Yong Kin
4,
, Sang-Won Kang
5,
1.Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Kusong-dong, Yusong-gu, Taejon 305-701, Korea
2.Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Kusong-dong, Yusong-gu, Taejon 305-701, Korea
3.Hynix Semiconductor Incorporated, San 136-1, Ami-ri, Bubal-eub, Icheon-si, Kyongki-do, 467-701, Korea
4.Hynix Semiconductor Incorporated, San 136-1, Ami-ri, Bubal-eub, Icheon-si, Kyongki-do, 467-701, Korea
5.Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Kusong-dong, Yusong-gu, Taejon 305-701, Korea
Keywords：
Atomic layer deposition
Atomic layer deposition (ALD) has become an essential deposition method for forming nanometer scale thin films in the microelectronics industry, and its applications have been extended to multi-component thin films, as well as to single metal oxide films. In order to investigate the development of the surface structure of ultra-thin film qualitatively as well as quantitatively, ALD processes are simulated with a molecular scale. For this simulation, the film materials are deposited on a imaginary substrate that consists of small lattice. The deposition behaviors are described by using random deposition (RD) model or random deposition with surface relaxation (RDSR) model as the ALD growth mode, and the proposed model was applied to the deposition of SrO-TiO2 thin films. Through this work, growth characteristics such as surface morphology, deposited film coverage can be predicted.
参考文献
| [1] |
J.W. Elam;Z.A. Sechrist;S.M. George .ZnO/Al_2O_3 nanolaminates fabricated by atomic layer deposition: growth and surface roughness measurements[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2002(1):43-55. |
