在室温下用308 MeV的Xe离子和853 MeV的Pb离子辐照Ni/SiO_2样品,用卢瑟福背散射和X射线衍射技术对样品进行了分析.通过分析Ni/SiO_2样品中元素成分分布和结构随离子辐照剂量和电子能损的变化,探索了离子辐照在Ni/SiO_2样品中引起的界面原子混合与结构相变现象.实验结果显示,Xe和Pb离子辐照均能引起明显的Ni原子向SiO_2基体的扩散并导致界面附近Ni,Si和O原子的混合.实验观测到低剂量Xe离子辐照可产生NiSi_2相,而高剂量Xe离子辐照则导致了Ni_3Si和NiO相的形成.根据热峰模型,Ni原子的扩散和新相的形成可能由沿离子入射路径强电子激发引起的瞬间热峰过程驱动.
Ni/SiO_2 interface were irradiated at room temperature with 308 MeV Xe ions to 1×10~(12), 5×10~(12) Xe/cm~2 and 853 MeV Pb ions to 5× 10~(11) Pb/cm~2, respectively. These samples were analyzed using Rutherford Backscattering Spectrometry (RBS) and X-ray diffraction spectroscopy (XRD) , from which the intermixing and phase change were investigated. The obtained results show that both Xe- and Pb-ions could induce diffusion of Ni atoms to SiO_2 substrates and result in intermixing of Ni with SiO_2. Furthermore, 1.0×10~(12) Xe/cm~2 irradiation induced the formation of NiSi_2 and 5.0×10~(12) Xe/cm~2 irradiation created Ni_3 Si and NiO phases. The diffusion of Ni atoms and the formation of new phase may be driven by a transient thermal spike process induced by the intense electronic energy loss along the incident ion path.
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