目前,对磁控溅射组装Cu-W均质复合膜的工艺及成膜机理研究不够深入.通过磁控溅射组装均质Cu-W薄膜,考察了溅射工艺参数对膜结构的影响.结果表明:直流磁控溅射组装均质Cu-W薄膜时,钨是以β-钨为骨架固溶进部分铜的方式存在;随铜靶功率的增加,铜的晶粒尺寸先变大后变小;随钨靶功率的增大,β-钨有向非晶态转变的趋势,且铜的晶粒尺寸会明显变小;薄膜的沉积速率主要由钨靶功率决定;工作气体氩气气压低于1.0 Pa时,随气压升高,铜的晶粒尺寸变小,高于1.0 Pa时,气压对薄膜结构没有影响.
参考文献
[1] | Wang C;Brault P;Zaepffer C et al.Deposition and structure of W-Cu multiplayer coating by magnetron sputtering[J].Applied Physics,2003,36:2709-2713. |
[2] | Auciello O;Chevacharoenkul S;Amenn M S et al.Controlled ion beam sputter deposition of W/Cu/W layered films for microelectronic applications[J].Journal of Vacuum Science and Technology,1991,9(03):625-631. |
[3] | Pacaud J;Gladyszewski G;Jaouen C et al.Low temperature mixing in Cu/W superlattices irradiated with light and heavy ions[J].Applied Physics,1993,73(06):2786-2793. |
[4] | Oron M;Adams C M .Morphology of Cu-W and Cu-Mo Films Prepared by Electron-Beam Co-Deposition[J].Applied Physics,1968,40:4218-4220. |
[5] | Hubler G K;Sprague J A .Energetic Particles in PVD technology:Particle-surface interaction processes and energyparticle relationships in thin deposition[J].Surface and Coatings Technology,1996,81:29-35. |
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