采用磁控溅射法在硅基材上制备了Al-Cu-Fe薄膜,采用原予力显微镜(AFM)和X射线衍射仪(XRD)研究了不同溅射时间下Al-Cu-Fe薄膜的生长行为.结果表明.随着溅射时间的延长,Al-Cu-Fe薄膜的β晶相的衍射峰半峰宽逐渐减小,而λ晶相的衍射峰半峰宽则逐渐增大.Al-Cu-Fe薄膜的生长依次经历了小岛形核阶段、小岛结合阶段、连续薄膜阶段、晶粒长大阶段等4个阶段.另外,随着溅射时间的延长,Al-Cu-Fe薄膜的粗糙度呈现出先增大后减小的趋势.
The Al-Cu-Fe thin film is fabricated on silicon substrate by magnetron co-sputtering method.The mechanism of film growth under different sputtering times and pressures are investigated by means of AFM and XRD.The results show that the HWHM of β crystal phase in Al-Cu-Fe thin film decreases with the extension of the sputtering times.However,that of λ crystal phase increases with the sputtering time raising.Four stages followed in the growth of Al-Cu-Fe thin film axe island nuelearing stage,island combining stage,continuous film stage and crystal growth stage.Furthermore,the roughness of Al-Cu-Fe thin film increases with the sputtering times raises and reduces afterwards.
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