材料期刊网

研究了硼掺杂硅（记为Si-19）薄膜和半无限大物体（Si-19和SiC）在100 nm真空间距下的近场辐射换热随薄膜厚度的变化。研究结果表明,当半无限大物体和薄膜为相同的Si-19材料时,由于表面波激发并相互耦合,使得近场辐射换热随薄膜的厚度变化比较复杂。当半无限大物体为SiC材料时,由于表面波的耦合遭到破坏以及辐射体的高发射率频率区和吸收体的高吸收率频率区不匹配,导致表面波的激发对不同材料间的近场辐射换热的增强程度降低,因此在相同计算区域内热流密度随厚度的增加单调增加,没有出现极值点。

The near-field radiative heat transfer between boron doped silicon（Si-19） thin film and semi-infinite body（Si-19 and SiC） at 100 nm vacuum gap is investigated for different film thickness. Result shows that when the semi-infinite body is Si-19 material,due to the excitation of the surface waves and these surface waves coupled with each other,the near-field radiative heat transfer with film thickness is complicated.When the semi-infinite body is SiC material,the couple of surface waves are destructed and the frequency band for high emissivity of the emitter and that for high absorptivity of receiver are not matched,resulting in decrease of the enhancement of the near-field radiative heat transfer due to excitation of surfaces.Thus in the same computation area,the radiative heat flux monotonously increases with increase of film thickness.Therefore,no extreme point is observed for this case.