采用分子束外延（MBE）方法在Si（001）衬底上生长了Er2O3薄膜。高分辨率透射电子显微镜（HRTEM）测试显示Er2O3薄膜保持了在衬底上完好的外延,样品为均匀的单晶结构。将单晶Er2O3薄膜制备成MOS结构并对其做电容-电压（C-V）测试时,发现样品在高频时积累端电容出现了很大程度的频率色散现象。为了解释这种现象,提出了样品中存在缺氧层的结构模型。对该模型等效电路阻抗表达式推导得到了电容-频率方程,并将此方程与实验数据进行拟合,得到的图形、变量参数表明,未完全氧化的插入层是高频MOS C-V测试出现频率色散现象的主要原因。因此认为要消除Er2O3栅介质积累端的频率色散效应,需要尽量减少或避免缺氧层的形成。
Er2O3 films have been prepared on p-type Si（001） substrate by molecular beam epitaxy（MBE）.High-resolution transmission electron microscope（HRTEM） images show that the samples are uniform single crystals with perfect epitaxy on the substrate.It is found that the accumulation capacitances take on the frequency dispersion at high frequency when taking C-V test for MOS capacitor with Er2O3/p-Si.A new model for explaining the frequency dispersion effect is proposed.The capacitance-frequency equations are obtained by deriving the impedance expression of the model equivalent circuit.The equation and the experimental data are fitted by the MATLAB.The result shows that the interfacial layer,which is not fully oxidized,is the main reason of the frequency dispersion effect.Accordingly,we need to minimize or avoid the formation of the interfacial layers in order to eliminate the frequency dispersion effect of Er2O3 in accumulation.
参考文献
| [1] | 阎志军,王印月,徐闰,蒋最敏.电子束蒸发制备HfO2高k薄膜的结构特性[J].物理学报,2004(08):2771-2774. |
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