以CH4和CO2作生长金刚石薄膜的反应气体，以Ar作载气将三聚氰胺甲醇饱和溶液带入沉积室内作氮掺杂源，用微波等离子体化学气相沉积法在单晶硅衬底上制备出掺氮纳米金刚石薄膜。通过拉曼光谱、原子力显微镜、霍尔效应研究了掺氮纳米金刚石薄膜的组成、结构和导电性能，重点研究了微波输入功率对薄膜特性的影响。结果表明，制备的掺氮纳米金刚石薄膜具有良好的电子导电性，且随着激发等离子体微波功率的增大，其晶粒尺寸、晶界宽度、表面粗糙度和电导率增大，在最佳微波功率条件下制备出电子电导率高、材料质量好的纳米金刚石薄膜。
Nanocrystalline diamond thin films doped with N was prepared on Si substrate by microwave plasma chemical vapor deposition(MPCVD) technology using CO2, CH4 as acting gas source and the methanol saturat- ed solution of melamine as doping source carried into deposition chamber with Ar gas. Then the composition, structure and electrical conductivity of obtained films were characterized through laser Raman spectroscopy, atomic force microscope, and hall-effect test microwave power on the gained film feature. gen doping effect could be prepared using the size, grain boundary width, surface roughnes so increased obviously. could be achieved under Further, the high el ing means in which the emphasis was focused on the influence of The results showed that nano diamond thin films with good nitro- designed process, and with microwave power increasing, the grain s, as well as the electrical conductivity of grown diamond films al- ectronic conductivity of the film along with nice material quality appropriate microwave power
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