用扫描电镜继续对发光多孔硅的阴极射线发光进行了系统的研究，得到了其阴极荧光发射部位、强度分布显微照片，发现在样品的表面层脱落处（暴露着多孔层大量微孔）无阴极射线发光产生，只有表面层未脱落处才有阴极射线发光；对样品的截面实验研究同样清楚地表明多孔硅样品的阴极射线发光只来源于其表面层，多孔层、硅单晶衬底区域不发生阴极射线发光．实验还提供了阴极射线发光强度在截面上随深度变化情况显微照片．阴极射线发光光谱表明其光谱峰值位置在680nm处，相似于多孔硅的光致发光．实验结果再次表明多孔硅的可见光来源于其表面层中的荧光物质．
The visible cathodolumincscence (CL) spectrum of the visible light emitting porous silicon(peaked at 680nm) was obtAlNed and proved to be similar to the photoluminescence one. The sourceof CL was detected by the scanning electron microscopy (SEM). The SEM microphotographes ofthe surface of the sample shows that the CL only emits from the surface layer and there is no CLfrom the porous layer where the surface layer dropped off. The SEM microphotogrophes on thecross section of the sample shows the same result. The above experiments suggest again that the visible luminescence from the porous silicon is from the fluorescent material in the surface layer of the porous silicon.
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