In-Situ Observation of SiC Bulk Single Crystal Growth by XRD System

稀土学报(英文版), 2006, 24(z1): 49-53.

^1, , ^2, , ^3, , ^4,

1.National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central, 1-1-1, Umezono, Tsukuba, Ibaraki 305-8568, Japan

2.National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central, 1-1-1, Umezono, Tsukuba, Ibaraki 305-8568, Japan

3.National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central, 1-1-1, Umezono, Tsukuba, Ibaraki 305-8568, Japan

4.National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central, 1-1-1, Umezono, Tsukuba, Ibaraki 305-8568, Japan

基金项目: METI NSS Program (Ultra-Low Loss Power Device Technology) The high-resolution X-ray topography was performed at BL20B2 in the SPring-8 with the approval of the Japan Synchrotron Radiation Research Institute(2005A0403-ND3c-np)

In-Situ Observation of SiC Bulk Single Crystal Growth by XRD System

Keywords： defects

In-situ analysis for SiC bulk single crystal growth was reported using vertical X-ray diffractometer system. A furnace for SiC sublimation growth combined with the XRD system which possessed three kinds of functions including topography, rocking curve measurement and crystal growth rate monitoring was developed. These functions could contribute as a powerful tool finding the optimum growth condition by dynamic observation in the crucible. In this study, the in-situ X-ray topographs succeeded to capture dynamic elongation of defects and dislocation generated in the SiC growing crystals. The in-situ rocking curve measurement reviled appearance of mosaic structure in the SiC crystal grown with high growth rate. The in-situ growth rate monitoring also succeeded very precisely using the direct X-ray beam absorption. On the base of findings and facts obtained by the in-situ observations, the importance for the SiC growth was discussed.

参考文献

[1]	Tairov Y M;Tsvetkov V F .[J].Journal of Crystal Growth,1978,43(02):209.
[2]	Yamaguchi H;Oyanagi N;Kato T et al.[J].Materials Science Forum,2000,338-342:461.
[3]	Kato T;Oyanagi N;Yamaguchi H et al.[J].Journal of Crystal Growth,2001,222:579.
[4]	Oyanagi N;Nishizawa S;Kato T et al.[J].Materials Science Forum,2000,338-342:75.
[5]	Bahng W.;Nishizawa S.;Yamaguchi H.;Khan MN.;Oyanagi N. Nishino S.;Arai K.;Kitou Y. .Rapid enlargement of SiC single crystal using a cone-shaped platform[J].Journal of Crystal Growth,2000(4):767-772.

上一张下一张

计量

下载量()
访问量()

作者相关

在本站搜索
在百度学术搜索
在万方数据库搜索
在CNKI搜索

文章评分

您的评分：
1

0%
2

0%
3

0%
4

0%
5

0%

材料期刊网

In-Situ Observation of SiC Bulk Single Crystal Growth by XRD System

参考文献