采用微波等离子体化学气相沉积(microwave plasma chemical vapor deposition,MPCVD)技术系统地研究了GaN的分解机制.结果表明微波等离子体富氢环境促进了GaN的分解反应,分解过程由表面缺陷开始,向侧面扩展,最后沿氮极性面进行;氢等离子体中通入少量氮气能够显著抑制GaN的分解,在此基础上采用两步生长法成功实现在GaN上纳米金刚石膜的直接沉积.
参考文献
| [1] | 李效白.氮化镓基固态器件的研究进展[J].半导体技术,2001(05):20-25. |
| [2] | 曹传宝,朱鹤孙.氮化镓薄膜及其研究进展[J].材料研究学报,2000(z1):1-7. |
| [3] | 袁明文.氮化镓在光电子和微电子器件中的应用[J].半导体技术,2001(06):16-19,39. |
| [4] | Pisch A.;Schmid-Fetzer R. .In situ decomposition study of GaN thin films[J].Journal of Crystal Growth,1998(3/4):329-332. |
| [5] | Vivek Coyal;Anirudha V. Sumant;Desalegne Teweldebrhan;Alexander A. Balandin .Direct Low-Temperature Integration of Nanocrystalline Diamond with GaN Substrates for Improved Thermal Management of High-Power Electronics[J].Advanced functional materials,2012(7):1525-1530. |
| [6] | Jonathan G. Felbinger;M. V. S. Chandra;Yunju Sun;Lester F. Eastman;John Wasserbauer;Firooz Faili;Dubravko Babic;Daniel Francis;Felix Ejeckam .Comparison of GaN HEMTs on Diamond and SiC Substrates[J].IEEE Electron Device Letters,2007(11):948-950. |
| [7] | D. Francis;F. Faili;D. Babic .Formation and characterization of 4-inch GaN-on-diamond substrates[J].Diamond and Related Materials,2010(2/3):229-233. |
| [8] | P.W. May;H.Y. Tsai;W.N. Wang .Deposition of CVD diamond onto GaN[J].Diamond and Related Materials,2006(4/8):526-530. |
| [9] | M. Seelmann-Eggebert;P. Meisen;F. Schaudel .Heat-spreading diamond films for GaN-based high-power transistor devices[J].Diamond and Related Materials,2001(3-7):744-749. |
| [10] | Chabak, K. D.;Gillespie, J. K.;Miller, V.;Crespo, A.;Roussos, J.;Trejo, M.;Walker, D. E.;Via, G. D.;Jessen, G. H.;Wasserbauer, J.;Faili, F.;Babic, D. I.;Francis, D.;Ejeckam, F. .Full-Wafer Characterization of AlGaN/GaN HEMTs on Free-Standing CVD Diamond Substrates[J].IEEE Electron Device Letters,2010(2):99-101. |
| [11] | L'vov BV. .Kinetics and mechanism of thermal decomposition of GaN[J].Thermochimica Acta: An International Journal Concerned with the Broader Aspects of Thermochemistry and Its Applications to Chemical Problems,2000(1):85-91. |
| [12] | Yen-Hsien Yeh;Kuei-Ming Chen;Yin-Hao Wu;Ying-Chia Hsu;Tzu-Yi Yu;Wei-I Lee .Hydrogen etching of GaN and its application to produce free-standing GaN thick films[J].Journal of Crystal Growth,2011(1):16-19. |
| [13] | Hiramatsu K.;Onishi M.;Mizutani H.;Narukawa M.;Motogaito A.;Miyake H.;Iyechika Y.;Maeda T.;Nishiyama K. .Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)[J].Journal of Crystal Growth,2000(0):316-326. |
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