研究了含硅3.25％的铁硅单晶体,在加热到900℃经过35％轧制后的组织结构,和退火后的再结晶织构。观察到样品轧制后在厚度内的畸变程度是不均匀的。退火时在畸变较大的表面层中先发生再结晶,然后再结晶晶粒向着畸变较小的中心层生长。用金相和X射线技术研究后证明:在表面层中与再结晶织构取向相同的轧制织构已经存在,这时同位再结晶是形成再结晶织构的主耍原因;样品在高温退火后形成的再结晶织构,是由于表面层中已再结晶的晶粒向着中心层择优生长的结果。
The recrystallization of the hot-rolled silicon iron single crystals, after a reduction inthickness of 35％, was investigated. It was observed that the distortion was not uniformacross the thickness after hot-rolling. The distorion in the surface layer was larger thanin the inferior. When the samples were annealed, the recrystallization took place first inthe surface layer by the process of recrystallization in situ. Then the grains grew towardsthe interior by preferred growth of recrystallized grains in the surface layer.
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