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本文采用金属有机化学气相沉积(MOCVD)法在MgO(100)衬底上成功生长了非极性的m面(1010) ZnMgO薄膜.研究了衬底温度对ZnMgO薄膜生长取向的影响.X射线衍射(XRD)分析结果表明当衬底温度为400℃时可以获得单一取向的m面ZnMgO薄膜.采用扫描电子显微镜(SEM)观察到ZnMgO薄膜表面平整,由条纹状结构组成.透射电子显微镜(TEM)分析进一步证明ZnMgO为具有m面取向的单晶薄膜.X射线光电子能谱(XPS)定量分析表明ZnMgO薄膜中Mg含量为3at.%.

参考文献

[1] D. C. Look;B. Claflin .P-type doping and devices based on ZnO[J].Physica Status Solidi. C, Conferences and critical reviews,2004(4):b624-b630.
[2] W. Z. Xu;Z. Z. Ye;Y. J. Zeng;L. P. Zhu;B. H. Zhao;L. Jiang;J. G. Lu;H. P. He;S. B. Zhang .ZnO light-emitting diode grown by plasma-assisted metal organic chemical vapor deposition[J].Applied physics letters,2006(17):173506-1-173506-3-0.
[3] R.Yungryel;T.Lee et al.Next generation of oxide photonic devices:ZnO-based ultraviolet light emitting diodes[J].Applied Physics Letters,2006,88:241108-241110.
[4] Diebold U;Koplitz LV;Dulub O .Atomic-scale properties of low-index ZnO surfaces[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2004(1/4):336-342.
[5] Y.Zhang;G.Wang;Y.P.Cui et al.Electrochemical deposition and stimulated emission of zinc oxide thin films[J].Chinese Journal of Lasers,2004,31:97-100.
[6] P.Waltereit;O.Brandt;A.Trampert .Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes[J].Nature,2000,406:865-867.
[7] Jinju Chen;Hong Deng;Ning L;Yanlei Tian;Hong Ji .Realization of nonpolar a-plane ZnO films on r-plane sapphire substrates using a simple single-source chemical vapor deposition[J].Materials Letters,2011(4):716-718.
[8] R. Deng .Surface morphology, structural and optical properties of polar and non-polar ZnO thin films: A comparative study[J].Journal of Crystal Growth,2009(19):4398.
[9] M. Nistor;N.B. Mandache;J. Perriere;C. Hebert;F. Gherendi;W. Seiler .Growth, structural and electrical properties of polar ZnO thin films on MgO (100) substrates[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2011(11):3959-3964.
[10] E. Cagin;J. Yang;W. Wang;J. D. Phillips;S. K. Hong;J. W. Lee;J. Y. Lee .Growth and structural properties of m-plane ZnO on MgO (001) by molecular beam epitaxy[J].Applied physics letters,2008(23):233505-1-233505-3-0.
[11] Shen JY.;Ansara I.;Chatillon C. .Influence of the elastic energy due to lattice mismatch on phase equilibria in the epitaxy of As-Ga-In layers[J].Calphad: Computer Coupling of Phase Diagrams and Thermochemistry,1998(4):495-512.
[12] Taohua Huang;Shengming Zhou;Hao Teng;Hui Lin;Jun Wang;Ping Han;Rong Zhang .Growth and characterization of ZnO films on (001), (100) and (010) LiGaO_2 substrates[J].Journal of Crystal Growth,2008(13):3144-3148.
[13] P.Waltereit;O.Brandt;M.Ramsteiner .M-plane GaN(1100) grown on γ-LiAlO_2(100): nitride semiconductors free of internal electrostatic fields[J].Journal of Crystal Growth,2001(0):437-441.
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