利用磁控溅射法于500 ℃、550 ℃、600 ℃和650 ℃下在Al2O3(001)衬底上生长ZnO薄.对生长的ZnO薄膜后分别进行了800 ℃退火和1000 ℃退火处理.利用X射线衍射(XRD)、霍尔测试仪和透射谱仪对薄膜的结构、电学和光学性质进行了研究,结果表明合适的生长温度和退火温度能够提高ZnO薄膜的结晶质量和性能.
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