欢迎登录材料期刊网

材料期刊网

高级检索

本文以Zn(NO3)2·6H2O和Al(NO3)3·9H2O为原料采用均匀沉淀法制备了Al掺杂ZnO(ZAO)超细粉体,用XRD、SEM、纳米粒度分析仪及四探针电阻仪等对ZAO超细粉体进行了测试表征.研究了反应温度、煅烧温度、反应物浓度、Al掺杂量及分散剂添加量对ZAO超细粉体形貌、尺寸及电阻率的影响.研究结果表明:制备的ZAO粉体为纤锌矿结构;煅烧温度为550℃时,ZAO晶相形成很好;随着Al掺杂量的增加,ZAO粉体电阻率降低,晶格常数减小,但当Al掺杂量大于2.0 mol%时,生成尖晶石相,其电阻率反而上升.

参考文献

[1] D. C. Reynolds;C. W. Litton;T. C. Collins;J. E. Hoelscher;J. Nause .Observation of donor-acceptor pair spectra in the photoluminescence of H- and Zn-implanted ZnO single crystals[J].Applied physics letters,2006(14):141919-1-141919-3-0.
[2] Navale SC;Ravi V;Mulla IS;Gosavi SW;Kulkarni SK .Low temperature synthesis and NOx sensing properties of nanostructured Al-doped ZnO[J].Sensors and Actuators, B. Chemical,2007(2):382-386.
[3] K.J. Chen;T.H. Fang;F.Y. Hung;L.W. Ji;S.J. Chang;S.J. Young;Y.J. Hsiao .The Crystallization And Physical Properties Of Al-doped Zno Nanoparticles[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2008(18):5791-5795.
[4] Mujdat Caglar;Saliha Ilican;Yasemin Caglar;Fahrettin Yakuphanoglu .The effects of Al doping on the optical constants of ZnO thin films prepared by spray pyrolysis method[J].Journal of Materials Science. Materials in Electronics,2008(8/9):704-708.
[5] 吴建青,钟燚,颜东亮.ZnO半导体粉体制备工艺与电阻率的关系[J].华南理工大学学报(自然科学版),2007(05):100-103,108.
[6] 王书媚,税安泽,曾令可,刘平安,程小苏,王慧.表面活性剂对纳米氧化锌粉体分散性的影响[J].陶瓷学报,2007(03):217-220.
[7] Robert R. Piticescu;Roxana M. Piticescu;Claude J. Monty .Synthesis of Al-doped ZnO nanomaterials with controlled luminescence[J].Journal of the European Ceramic Society,2006(14):2979-2983.
[8] 张雪川,张跃,袁洪涛,王树彬.MOCVD法制备一维定向ZnO晶须阵列及掺杂研究[J].人工晶体学报,2005(06):972-976.
[9] David Berardan;Celine Byl;Nita Dragoe .Influence of the Preparation Conditions on the Thermoelectric Properties of Al-Doped ZnO[J].Journal of the American Ceramic Society,2010(8):2352-2358.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%