The depth and nature of the subsurface damage in a silicon wafer will limit the performance of IC components.Damage microstructures of the silicon wafers ground by the #325,#600, and #2000 grinding wheels was analyzed.The results show that many microcracks,fractures, and dislocation rosettes appear in the surface and subsurface of the wafer ground by the #325 grinding wheel.No obvious microstructure change exists.The amorphous layer with a thickness of about 100 nm,microcracks, high density dislocations,and polycrystalline silicon are observed in the subsurface of the wafer ground by the #600 grinding wheel.For the wafer ground by the #2000 grinding wheel,an amorphous layer of about 30 nm thickness,a polycrystalline silicon layer,a few dislocations,and an elastic deformation layer exist.In general,with the decrease in grit size,the material removal mode changes from micro-fracture mode to ductile mode gradually.
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