采用复合定向凝固法制备多晶硅铸锭,在精炼和定向凝固过程中施加电磁场控制柱状晶生长过程.实验制得平行于铸锭中心轴的柱状晶,直径约为1mm,铸锭表面质量良好.分析表明金属杂质并未在晶界处发生聚集;且沿铸锭轴向分布也有明显改善,增加了铸锭的有效提纯长度.并通过理论计算探讨了晶体生长速度和定向凝固次数对杂质去除效果的影响.
In this experiment, complex directional solidification (CDS) method was used for preparing multi-crys-talline silicon ingot. Meanwhile electromagnetic field was used during refining and solidification process. Exper-imental results show that an integral silicon ingot with high-quality is successfully fabricated. Analyses reveal that the direction of the most grains is parallel to the axial of silicon ingot, the impurities are separated to the two ends of silicon ingot effectively. The effect of crystal growth and directional solidification times on the puri-fication of metallurgical grade silicon are studied by theoretical calculations.
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