用改进的垂直坩埚下降法成功地生长了高质量的钨酸铅晶体，晶体毛坯的尺寸为２８ｍｉｎ×２８ｍｍ×３６０ｍｍ；晶体的生长工艺参数为：籽晶取向［００１］；下降速度 ０．６～１．０ｍｍ／ｈ；生长界面附近的温度梯度为２０～３０℃／ｃｍ，加工后的晶体成品在４２０ｎｍ附近的透过率＞６０％；在３６０ｎｍ附近的透过率＞２５％．晶体的光输出＞９ｐ．ｅ／ＭｅＶ；光伤＜５％．
High-quality lead tungstate (PWO) single crystals were successfully grown by a modi- fied vertical Bridgman method. The optimal growth parameters selected are as follows: seed crys- tal direction <001 >, lowering rate 0.6~1mm/h, the axial temperature gradient 20-30℃/cm at growth solid-melt boundary. The performances of PWO crystals obtained are as follows: optical transmittance more than 60% at 420nm and more than 25% at 360nm, light yield more than 9 p.e./MeV, light loss less than 5% after irradiation.
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