采用扫描电镜(SEM),能谱仪(EDS),X-射线衍射仪(XRD)等方法,研究了U上磁控溅射Ti镀层在600 ℃,0.5 h,150 MPa条件下热等静压(HIP)处理对其表面界面特性及界面扩散的影响.结果表明:经HIP处理后,镀层致密性提高,膜基结合强度也提高,U、Ti在界面的扩散受到压力的抑制.
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