考虑量子结构的各向异性,基于双参数变分方法理论分析了准一维GaN-基纳米线结构的类氢杂质态光学特性.数值结果表明,GaN纳米线体系的杂质结合能达到190 meV,是相同尺寸GaAs-基量子线中相应值的2.5倍.这一结果与最近GaN纳米线杂质态的实验测量相当符合.计算发现,采用双参数变分波函数描述准一维GaN纳米线体系各向异性是有必要的,尤其是当纳米线尺寸较小时.讨论了杂质的位置对结合能、杂质基态能量以及变分参数的影响,并对这些观察背后的深刻物理现象进行了分析.
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