采用射频磁控溅射法在玻璃衬底上低温制备出了镓掺杂氧化锌(ZnO:Ga)透明导电膜,研究了真空退火对薄膜结构、电学和光学特性的影响.结果表明:真空退火后,薄膜结构得到明显改善,电阻率由退火前的1.13×10-3Ω·cm下降到5.4×10-4Ω·cm,在可见光区的平均透过率也由未退火前的83%提高到退火后的90%以上.
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