为研究氧化依（ＩｒＯ２）对ＰＺＴ铁电薄膜疲劳性能的影响，利用直流（ＤＣ）磁控反应溅射（ｓｐｕｔｔｅｒｉｎｇ）工艺成功地在ＳｉＯ２／Ｓｉ（１００）衬底上制得了高度取向的ＩｒＯ２薄膜．并在其上制成ＰＺＴ铁电薄膜．讨论了溅射参数（溅射功率、 Ａｒ／Ｏ２比、衬底温度）以及退火条件对氧化铱薄膜的结晶、取向和形态的影响．
Iridium oxide (IrO2) thin films were successfully grown on SiO2/Si(100) substrate by a DC magnetron reactive sputtering method with an Ir target(99.9% purity).
PZT ferroelectric thin films were deposited by a sol-gel method. The as-deposited thin films were annealed with a thermal annealing process, after that the films
were highly directed at (110) or (200). The effect of sputtering parameters such as gun power, oxygen partial pressure (Ar/O2) and growth temperature
and annealing conditions on the crystalline nature and morphology of IrO2 thin films was discussed.
参考文献
| [1] | Carrano J, Sudhama C, Chikarmane V, et al. IEEE Trans. Ultrasonics, Ferroelectrics, and Freq. Control., 1991, 38 (6): 690--703. [2] Dey S K, Zuleeg R. Ferroelectrics, 1990, 108: 37--46. [3] Warren W L, Dimos D, Waser R M. MRS Bulletin, 1996, 21 (7): 40--45. [4] Yoo I K, Desu S B. Phys. Stal. Sol.(A), 1992, 133: 565--573. [5] Mihara T, Watanabe H, et al. Jpn. J. Appl. Phys. Part 1, 1994, 33 (7A): 3996--4002. [6] Moazzami R. Semicond. Sci. Technol., 1995, 10: 375--390. [7] Scott J F, Araujo C A, et al. J. Appl. Phys., 1991, 70 (1): 382--388. [8] Jeon M S, Lee J B, Choi D K. Jpn. J. Appl. Phys. Part 1, 1998, 37 (6A): 3391--3395. [9] Nakamura T, Nakao Y, et al. Appl. Phys. Lett., 1994, 65 (12): 1522--1524. [10] Nakamura T, Nakao Y, et al. Jpn. J. Appl. Phys. Part 1, 1994, 33 (9B): 5207--5210. [11] Foster C M, Bai G R, et al. J. Appl. Phys., 1997, 81 (5): 2349--2357. [12] Dat R, Lichtenwalner D J, et al. Appl. Phys. Lett., 1994, 64 (20): 2673--2675. [13] Lee J, Johnson L, et al. Appl. Phys. Lett., 1993, 63 (1): 27--29. [14] Cho H J, Horh H, et al. Jpn. J. Appl. Phys. Part 1, 1997, 36 (3B): 1722--1727. |
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