论述了ZnO薄膜p型转变的难点及其解决方法的最新研究进展,并讨论了Al+N+H共掺杂生长p-ZnO薄膜的掺杂机制,提出多层缓冲层生长工艺以实现p-ZnO薄膜的可控掺杂,进而优化薄膜性能.
参考文献
[1] | Service R F .Will UV Lasers Beat the Blues[J].Science,1997,276(09):895. |
[2] | Tang ZK.;Yu P.;Kawasaki M.;Ohtomo A.;Koinuma H.;Segawa Y.;Wong GKL. .Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films[J].Applied physics letters,1998(25):3270-3272. |
[3] | Bagnall DM.;Zhu Z.;Yao T.;Shen MY.;Goto T.;Chen YF. .High temperature excitonic stimulated emission from ZnO epitaxial layers[J].Applied physics letters,1998(8):1038-1040. |
[4] | Jin B J et al.Effects of native defects on optical and electrical properties of ZnO prepared by pulsed laser deposition[J].Materials Science and Engineering B,2000,71(1-3):301. |
[5] | Park CH.;Zhang SB.;Wei SH. .Origin of p-type doping difficulty in ZnO: The impurity perspective - art. no. 073202[J].Physical Review.B.Condensed Matter,2002(7):3202-0. |
[6] | Yamamoto T.;Katayama-Yoshida H. .Unipolarity of ZnO with a wide-band gap and its solution using codoping method[J].Journal of Crystal Growth,2000(0):552-555. |
[7] | Lee E C et al.Compensation mechanism for N acceptors in ZnO[J].Physical Review B,2002,64:085. |
[8] | Kamata A et al.Origin of the low doping efficiency of nitrogen acceptors in ZnSe grown by metalorganic chemical vapor deposition[J].Applied Physics Letters,1993,63(24):3353. |
[9] | Ye Zhi-Zhen et al.Preparation and characteristics of p-type ZnO films by DC reactive magnetron sputtering[J].Journal of Crystal Growth,2003,253:258. |
[10] | LU Jian-Guo et al.p-type ZnO films deposited by DC reactive magnetron sputtering at different ammonia concentrations[J].Materials Letters,2003,57:3311. |
[11] | Ji Zhen-Guo et al.Fabrication and characterization of p-type ZnO films by pyrolysis of zinc-acetate-ammonia solution[J].Journal of Crystal Growth,2003,253:239. |
[12] | LU Jian-Guo et al.Structural, electrical, and optical,properties of N-doped ZnO films synthesized by SS-CVD[J].Materials Science in Semiconductor Processing,2003,5:491. |
[13] | 吕建国,叶志镇,汪雷,赵炳辉,黄靖云.Preparation and Properties of N-Doped p-Type ZnO Films by Solid-Source Chemical Vapour Deposition with the c-Axis Parallel to the Substrate[J].中国物理快报(英文版),2002(10):1494-1497. |
[14] | GuoXL et al.Pulsed laser reactive deposition of p-type ZnO film enhanced by an electron cyclotron resonance source[J].Journal of Crystal Growth,2001,223:135. |
[15] | Yamamoto T et al.Solution using a codoping method to unipolarity for the fabrication of p-type ZnO[J].Japanese Journal of Applied Physics,1999(38):166. |
[16] | Joseph M.;Saeki H.;Ueda K.;Kawai T.;Tabata H. .Fabrication of the low-resistive p-type ZnO by codoping method[J].Physica, B. Condensed Matter,2001(0):140-148. |
[17] | Yamamoto T.;Katayama-Yoshida H. .Physics and control of valence states in ZnO by codoping method[J].Physica, B. Condensed Matter,2001(0):155-162. |
[18] | Zhang SB.;Yan YF.;Wei SH. .The thermodynamics of codoping: how does it work?[J].Physica, B. Condensed Matter,2001(0):135-139. |
[19] | Look D C et al.Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy[J].Applied Physics Letters,2002,81:1830. |
[20] | Chemical vapor deposition-formed p-type ZnO thin films[J].Journal of Vacuum Science & Technology, A. Vacuum, Surfaces, and Films,2003(4):1342-1346. |
[21] | Wang Jin-zhong et al.Epitaxial growth of NH3-doped ZnO thin films on <02 -2 4> oriented sapphire substrates[J].Journal of Crystal Growth,2003,255:293. |
[22] | Manabu K et al.Ga, N solubility limit in co-implanted ZnO measured by secondary ion mass spectrometry[J].Applied Surface Science,2002,189:349. |
[23] | PARK DAE-CHUL et al.SIMS depth profiling of N and In in a ZnO single crystal[J].Applied Surface Science,2003,203-204:359. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%