掺杂浓度及退火对Ta-ZnO透明导电薄膜表面形貌的影响

功能材料, 2010, 41(4): 687-693.

掺杂浓度及退火对Ta-ZnO透明导电薄膜表面形貌的影响

1.贵州大学,电气工程学院,贵州,贵阳,550003

2.安徽大学,物理与材料科学学院,安徽,合肥,230039

3.安徽大学,物理与材料科学学院,安徽,合肥,230039;"光电信息获取与控制"教育部重点实验室,安徽,合肥,230039

4.安徽大学,物理与材料科学学院,安徽,合肥,230039;"光电信息获取与控制"教育部重点实验室,安徽,合肥,230039

基金项目: 教育部博士点专项基金资助项目(20060357003) 国家自然科学基金资助项目(50872001;50642038) 安徽省科技厅重点资助项目(05021028) 安徽省人才专项基金资助项目(2004Z029) 贵州省科学技术基金资助项目([2009]2117)

关键词： Ta-ZnO薄膜 , 射频磁控溅射 , 掺杂 , 表面形貌 , 退火

Effect of Ta2O5 content in target and annealing temperature on morphological properties of Ta-ZnO films

室温下采用射频磁控溅射法在硅衬底上制备了掺Ta-ZnO透明导电薄膜,并在不同温度下退火处理.利用原子力显微镜、X射线光电子能谱仪对薄膜进行了表征分析,对于不同掺杂比例的Ta-ZnO薄膜以及退火后的Ta-ZnO薄膜的表面形貌进行了研究. 当掺杂比例为5%(质量分数)时,薄膜有最大平均颗粒尺寸94.46nm和最小表面粗糙度4.48nm.随着退火温度的升高,该薄膜表面粗糙度(RMS)先增加后减小,平均颗粒尺寸在94.46～118.05nm之间.

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