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采用掺镓晶硅和掺硼晶硅制备的寿命片和太阳电池片分别进行光致衰减实验,用WT-2000少子寿命测试仪和Halm电池电学性能测试仪等研究了它们受光照前后少子寿命和电学性能的变化.发现掺镓单晶寿命片的少子寿命衰减率比掺硼单晶寿命片低50%左右,掺镓单晶PERC电池和掺镓多晶常规电池转换效率的衰减率比掺硼单晶PERC电池和掺硼多晶常规电池分别降低3.41%和0.92%.这些结果表明晶硅太阳电池的光致衰减效应主要是晶硅中少子寿命降低导致的,晶硅掺镓后能有效抑制太阳电池的光致衰减现象.

参考文献

[1] S. W. Glunz;S. Rein;J. Y. Lee;W. Warta.Minority carrier lifetime degradation in boron-doped Czochralski silicon[J].Journal of Applied Physics,20015(5):2397-2404.
[2] Glunz SW.;Warta W.;Knobloch J.;Wettling W.;Rein S..Degradation of carrier lifetime in Cz silicon solar cells[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,20011/4(1/4):219-229.
[3] Jan Schmidt;Karsten Bothe.Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon[J].Physical Review.B.Condensed Matter,20042(2):024107.1-024107.8.
[4] J. Lindroos;Y. Boulfrad;M. Yli-Koski;H. Savin.Preventing light-induced degradation in multicrystalline silicon[J].Journal of Applied Physics,201415(15):154902-1-154902-5.
[5] S. Wilking;S. Ebert;A. Herguth;G. Hahn.Influence of hydrogen effusion from hydrogenated silicon nitride layers on the regeneration of boron-oxygen related defects in crystalline silicon[J].Journal of Applied Physics,201319(19):194512-1-194512-7.
[6] S. Wilking;A. Herguth;G. Hahn.Influence of hydrogen on the regeneration of boron-oxygen related defects in crystalline silicon[J].Journal of Applied Physics,201319(19):194503-1-194503-6.
[7] Agostinelli G;Delabie A;Vitanov P;Alexieva Z;Dekkers HFW;De Wolf S;Beaucarne G.Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,200618/19(18/19):3438-3443.
[8] Girisch R.B.M.;Mertens R.P..Determination of Si-SiO/sub 2/ interface recombination parameters using a gate-controlled point-junction diode under illumination[J].IEEE Transactions on Electron Devices,19882(2):203-222.
[9] 张研研;任瑞晨;史力斌.模拟分析发射层带隙及缺陷态对HIT太阳电池性能的影响[J].人工晶体学报,2013(8):1568-1573.
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