The surface treatments on CdSe wafers were studied by means of SEM, XPS and micro-current test instrument. The relations between electrical properties of CdSe wafers and surface topography, composition and structure were analyzed. The results show that the change of surface composition by etching is beneficial to decrease leakage current. Meanwhile, the increase of oxygen on surface caused by passivation can largely decrease leakage current. When passivating time is 40 min, the wafers surface appears smooth and compact, which will decrease the density of surface state, the optimal electrical property of the wafer is therefore obtained.
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